Light emitting diode package

ABSTRACT

A light emitting diode package includes a package body having a cavity, a light emitting diode chip having a plurality of light emitting cells connected in series to one another, a phosphor converting a frequency of light emitted from the light emitting diode chip, and a pair of lead electrodes. The light emitting cells are connected in series between the pair of lead electrodes.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/320,380, filed on Jun. 30, 2014, which is a continuation of U.S.patent application Ser. No. 13/320,356, filed on Nov. 14, 2011, andissued as U.S. Pat. No. 8,796,706 on Aug. 5, 2014, which is the NationalStage Entry of International Application No. PCT/KR2010/004222, filed onJun. 30, 2010, and claims priority from and the benefit of Korean PatentApplication No. 10-2009-0060429, filed on Jul. 3, 2009, and KoreanPatent Application No. 10-2010-0000724, filed on Jan. 6, 2010, all ofwhich are incorporated herein by reference for all purposes as if fullyset forth herein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a light emitting diode package and,more particularly, to a high voltage light emitting diode package thatmay be operated under a high voltage.

2. Discussion of the Background

Light emitting devices equipped with light emitting diodes, forinstance, light emitting diode packages, are widely used not only forapplications such as pilot lamps, electronic scoreboards and displaysdue to its capability of realizing various colors, but also for regularlighting due to capability of realizing white light. Light emittingdiodes are increasingly used in various fields due to advantageousfeatures, such as high efficiency, long operational lifespan, andenvironmental friendliness.

A white light emitting device is generally composed of a combination ofa blue light emitting diode and a yellow phosphor. However, since thewhite light emitting device composed of the combination of the bluelight emitting diode and the yellow phosphor emits white light havinghigh color temperature due to lack of a red color region, it is notsuitable for regular lighting.

While a red phosphor may be also used to realize a warm white colorhaving low color temperature, application of the red phosphor is limiteddue to low optical efficiency of the red phosphor. Further, phosphorsreact with moisture absorbed from the outside and experience efficiencydeterioration over time, thereby reducing operational lifespan of thelight emitting device and, in particular, the red phosphor experiencesmore rapid efficiency deterioration than a green or yellow phosphor,thereby further reducing operational lifespan of the light emittingdevice.

On the other hand, in order to apply the light emitting device toregular lighting using a household power source or the like, it isnecessary to provide a light emitting diode package that can be operatedunder a high voltage. Since a regular light emitting diode chip has anoperating voltage in the range of 2-4V, it is difficult to operate asingle light emitting diode chip under a high voltage. Thus, severallight emitting diode chips are connected in series for operation at highvoltage. However, using multiple light emitting diode chips results inan increase of the number of wire-bonding processes and an increase of apackage size. Further, when the light emitting device is operated underthe high voltage, it is necessary for the light emitting device to havea heat dissipation means for handling a large amount of heat generatedtherefrom and to prevent current leakage caused by application of suchhigh voltage. In particular, when a red light emitting diode chip isused instead of the red phosphor along with a blue light emitting diodechip, a red light emitting diode chip using a compound semiconductorsubstrate such as GaAs or InP is likely to undergo current leakagethrough the substrate. The current leakage deteriorates electricalstability, thereby restricting the utility of light emitting diodes.

SUMMARY OF THE INVENTION

An objective of the present invention is to provide a high voltage lightemitting diode package which may have a minimized size.

Another objective of the present invention is to provide a lightemitting diode package capable of realizing white light, particularly,warm white light.

Another objective of the present invention to provide a light emittingdiode package capable of providing electrical stability by preventingcurrent leakage that can occur from light emitting diode chips.

Another objective of the present invention is to provide a lightemitting diode package capable of preventing moisture infiltration.

Another objective of the present invention is to provide a lightemitting diode package that experiences low light loss and high heatdissipation efficiency while reducing restriction in mounting and/orwire-bonding of light emitting diodes.

In accordance with an aspect, the present invention provides a lightemitting diode package comprising: a package body having a cavity; alight emitting diode chip having a plurality of light emitting cellsconnected in series to one another; and a pair of lead electrodes. Thelight emitting cells are connected in series between the pair of leadelectrodes. It is possible to provide a high voltage light emittingdiode package capable of relieving an increase in package size bymounting the light emitting diode chip having the light emitting diodecells thereon.

A landing pad may be positioned on a bottom surface of the cavity andthe light emitting diode chip may be mounted on the landing pad.Further, bonding pads may be separated from the landing pad on thebottom surface of the cavity and have wires bonded to the bonding pads.Two of the bonding pads may be connected to the pair of lead electrodes,respectively.

Further, the light emitting diode package may further include Zenerdiodes. The Zener diodes are connected in parallel to the light emittingdiode chip. The Zener diodes may be mounted on the two bonding pads,respectively. The Zener diodes may be connected with opposite polaritiesin parallel to the light emitting diode chip. Thus, it is possible toprevent electrostatic discharge in a forward or reverse direction.

The landing pad may be formed of a metallic material having highreflectivity. Thus, it is possible to reflect light emitted from thelight emitting diode chip using the landing pad, thereby providing ahigh efficiency light emitting diode package.

The light emitting diode package may further include at least one lightemitting diode chip that emits light having a different frequency fromthe light emitted from the light emitting diode chip having theplurality of light emitting cells. It is possible to realize variouscolors, for example, white light, by a combination of these lightemitting diode chips and the phosphor.

A molding portion may cover the light emitting diode chip having theplurality of light emitting cells and the at least one light emittingdiode chip, and the phosphor may be distributed in the molding portion.

The light emitting diode package may include a plurality of landing padsseparated from each other on the bottom surface of the cavity, and thelight emitting diode chip having the plurality of light emitting cellsand the at least one light emitting diode chip may be mounted on thelanding pads, respectively. These light emitting diode chips may beconnected in series to each other between the pair of lead electrodes.

The light emitting diode chip having the plurality of light emittingcells may emit blue light, and the at least one light emitting diodechip may emit red light.

As such, it is possible to operate a light emitting diode package athigh voltage by serially connecting a blue light emitting diode chip,which has a plurality of light emitting cells serially connected to oneanother, to a plurality of red light emitting diode chips in the lightemitting diode package. Further, it is possible to prevent currentleakage from the light emitting diode chips from occurring by mountingthe light emitting diode chips on the respective landing pads separatedfrom each other. Furthermore, it is possible to realize warm white lightunder a high voltage via a combination of a blue light emitting diodechip, a plurality of red light emitting diode chips, and a phosphor.

The phosphor is disposed above the blue light emitting diode chip andthe red light emitting diode chips to change the frequency of lightemitted from the blue light emitting diode chip while scattering thelight emitted from blue light emitting diode chip and light emitted fromthe red light emitting diode chip to uniformly mix the light.

In some embodiments, the cavity may include a first cavity and a secondcavity with a step formed therebetween. Here, the first cavity islocated below the second cavity and the landing pads are positioned on abottom surface of the first cavity.

The high voltage light emitting diode package may further include amolding portion covering the light emitting diode chips in the firstcavity, a lens bonding agent formed on a bottom surface of the secondcavity and the molding portion, and a lens bonded to the package body bythe lens bonding agent. The lens enables adjustment of direction oflight.

The phosphor may be distributed in the molding portion. The moldingportion may be a gel-type silicone and the lens bonding agent may be ahigh hardness silicone having a Durometer Shore hardness of 60 or more.It is possible to enhance interface characteristics between the moldingportion and the lens bonding agent and between the lens bonding agentand the lens and, in particular, to prevent interface delamination andmoisture infiltration by a combination of the gel-type silicone moldingportion and the high hardness silicone bonding agent. Preferably, thelens is a glass lens to prevent the moisture infiltration.

In one embodiment, the package body may include a package lower parthaving a stack structure of substrates and a package upper part stackedon the package lower part and having the cavity formed therein. Here,the lead electrodes may be electrically connected to conductive patternsformed between the package upper part and the package lower part and mayextend to a lower surface of the package body through a side surface ofthe package body. Further, the package body may have grooves formed on aside periphery of the package body, and the lead electrodes may extendto the lower surface of the package body along the grooves,respectively. Here, the grooves may be formed on side corners of thepackage body. The package lower part may include ceramic substratesstacked in two or more layers, and the lead electrodes may fixedlysurround the ceramic substrate stacked in two or more layers. The leadelectrodes may be separated from each other and formed to have a widearea on the lower surface of the package lower part and a metallicheat-dissipating portion may be formed between the lead electrodes onthe lower surface thereof.

In one embodiment, the package body may include a lower dielectricsubstrate and an upper dielectric substrate stacked on the lowerdielectric substrate. Here, upper conductive patterns may be formed onan upper surface of the upper dielectric substrate, middle conductivepatterns may be formed between the upper and lower dielectric substratesto be connected to the upper conductive patterns through upper vias, andlower conductive patterns may be formed on a lower surface of the lowerdielectric substrate to be connected to the middle conductive patternsthrough lower vias. Heat sink patterns for heat dissipation may beformed between the upper and lower dielectric substrates and on thelower surface of the lower dielectric substrate, and may be connected toeach other through a heat transfer via penetrating the lower dielectricsubstrate.

In accordance with another aspect, the present invention provides alight emitting diode package including a package body and a lightemitting diode chip mounted on the package body. The package body of thelight emitting diode package includes an upper dielectric substratehaving a plurality of upper conductive patterns formed on an uppersurface of the upper dielectric substrate, a lower dielectric substratehaving a plurality of lower conductive patterns formed on a lowersurface of the lower dielectric substrate, a plurality of middleconductive patterns interposed between the upper and lower dielectricsubstrates, upper vias formed in the upper dielectric substrate toconnect the upper conductive patterns to the middle conductive patternstherethrough, respectively, and lower vias formed in the lowerdielectric substrate to connect the middle conductive patterns to thelower conductive patterns therethrough, respectively.

In one embodiment, the light emitting diode package may further includea transparent encapsulating portion formed over the upper surface of theupper dielectric substrate to cover the light emitting diode chip andthe upper conductive patterns. The transparent encapsulating portion mayinclude a lens having a center coincident with that of the lightemitting diode chip. At least one of the middle conductive patterns mayextend to a side surface of the upper dielectric substrate or the lowerdielectric substrate to be exposed to the outside. In one embodiment, aside surface of the upper dielectric substrate and a side surface of thelower dielectric substrate reside on the same cut plane, at least one ofthe middle conductive patterns extends to the same cut plane to beexposed to the outside, and all of the upper conductive patterns and allof the lower conductive patterns are formed in limited areas so as notto reach the same cut plane. At least one of the upper vias and at leastone of the lower vias may be connected to at least one of the middleconductive patterns while alternating with each other. The upperdielectric substrate may have two upper conductive patterns formed onthe upper surface thereof. A first heat sink pattern may be formedbetween the upper dielectric substrate and the lower dielectricsubstrate, a second heat sink pattern may be formed on the lower surfaceof the lower dielectric substrate, and a heat transfer via may be formedin the lower dielectric substrate to connect the first heat sink patternto the second heat sink pattern. The upper conductive patterns mayinclude a first upper conductive pattern at a center of the upperdielectric substrate and second and third upper conductive patterns atopposite sides of the upper dielectric substrate. An alignment mark ofthe light emitting diode chip may be provided to at least one of theupper conductive patterns and may be formed by regionally exposing theupper surface of the upper dielectric substrate within the upperconductive pattern. The upper dielectric substrate may be formed thereonwith a discrimination mark for discriminating a position of the lens.The plurality of upper conductive patterns, plurality of middleconductive patterns and plurality of lower conductive patterns may beformed by regional metal plating.

In accordance with a further aspect, the present invention provides alight emitting diode package including a package body and a lightemitting diode chip mounted on the package body. The package body mayinclude a plurality of upper conductive patterns formed on an uppersurface of an dielectric substrate by metal plating and electricallyconnected to the light emitting diode chip by die attaching or wirebonding, a plurality of lower conductive patterns formed on a lowersurface of the dielectric substrate by metal plating, conductivematerials extending from the respective upper conductive patterns to therespective lower conductive patterns through an interior of thedielectric substrate, and a heat sink pattern formed on the lowersurface of the dielectric substrate by metal plating and electricallyseparated from the upper conductive patterns. The dielectric substratemay include a single ceramic substrate having the upper conductivepatterns on an upper surface thereof and the lower conductive patternson a lower surface thereof. In one embodiment, the dielectric substratemay include a stack structure of upper and lower ceramic substrates, inwhich the upper ceramic substrate has the upper conductive patterns onan upper surface thereof and the lower ceramic substrate has the lowerconductive patterns on a lower surface thereof.

In accordance with yet another aspect, the present invention provides alight emitting diode package including: a package body comprising afirst ceramic substrate having conductive patterns including a landingpad formed thereon and at least one second ceramic substrate disposedbelow the first ceramic substrate; a light emitting diode chip mountedon the landing pad; and lead electrodes connected to at least some ofthe conductive patterns while extending to a lower surface of thepackage body through a side surface of the package body. In oneembodiment, the light emitting diode chip may include a plurality oflight emitting cells connected in series to one another. Each of thelead electrodes may extend to the lower surface of the package bodyalong each side corner of the package body. Further, the side corners ofthe package body may be formed with grooves receiving the leadelectrodes, respectively.

According to one embodiment, the light emitting diode package mayoperate at high voltage and prevent an increase of a package size byadopting a light emitting diode chip having a plurality of lightemitting cells connected in series. Further, it is possible to realizevarious colors by a combination of the light emitting diode chip havingthe light emitting cells connected in series and another light emittingdiode chip emitting light having a different frequency from the lightemitting diode chip. Further, these light emitting diode chips aremounted on landing pads separated from each other, thereby preventingcurrent leakage from the light emitting diode chips. The landing padsdissipate heat from the light emitting diode chips, thereby enhancingheat dissipation of the light emitting diode package. In addition, it ispossible to realize high output of white light, in particular, warmwhite light, under a high voltage by a combination of a blue lightemitting diode chip, a plurality of red light emitting diode chips and aphosphor. Further, it is possible to prevent moisture infiltration fromoutside by a combination of a gel-type silicone molding portion, a highhardness silicone bonding agent, and a glass lens.

In another embodiment, the package body comprises a package lower partand a package upper part, and a middle layer comprising conductivepatterns such as a landing pad(s) and a bonding pad(s) is interposedbetween the package upper part and the package lower part, in which atleast some of the conducive patterns extend to a lower side of thepackage body along a side surface of the package body to be exposed tothe outside, so that the light emitting diode package has improved heatdissipation. Furthermore, the conductive patterns fixedly surround thepackage lower part, in particular, two or more layers of dielectricsubstrates (or ceramic substrates), thereby enabling the package lowerpart to be more steadily fixed.

In one embodiment, a light emitting diode chip is directly mounted on anupper surface of a package body having a heat sink structure, on which alight emitting diode chip(s) and/or a Zener diode(s) are disposed bywire bonding, thereby lowering spatial restriction caused by mountingand/or wire bonding the light emitting diode chip(s) and/or the Zenerdiode(s). Further, since the package body of a substrate shape includesupper and lower dielectric substrates, heat dissipation paths areadditionally formed in different directions between the upper and lowerdielectric substrates, thereby improving heat dissipation efficiency.Further, it is possible to increase the heat dissipation paths orenlarge the area of the heat dissipation paths via middle conductivepatterns. The middle conductive patterns may prevent concentration ofheat on a via or the dielectric substrate near the via. An upper via anda lower via are connected to each other through a single middleconductive pattern while alternating with each other, thereby enablingan increase in the number of heat dissipation paths or enlargement ofthe area of the heat dissipation paths through the middle conductivepatterns. The middle conductive patterns may extend to the side surfaceof the upper or lower dielectric substrate to be exposed to the outside,thereby improving convective heat dissipation effect. Here, the packagebody of the heat dissipation substrate structure may be produced bydividing a large single substrate into several substrates by dicing. Inthis case, upper and lower conductive patterns are formed in limitedareas so as not to reach a cut plane formed by dicing, so that it ispossible to prevent the conductive patterns from being damaged ordetached from the package body.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features and advantages of the inventionwill be more clearly understood from the detailed description taken inconjunction with the accompanying drawings, in which:

FIG. 1 is a plan view of a high voltage light emitting diode package inaccordance with a first embodiment of the present invention;

FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1;

FIG. 3 is an equivalent circuit diagram of the light emitting diodepackage of FIG. 1;

FIG. 4 is a plan view of a high voltage light emitting diode package inaccordance with a second embodiment of the present invention;

FIG. 5 is a cross-sectional view of the high voltage light emittingdiode package shown in FIG. 4;

FIG. 6 is a detailed bottom plan view of the high voltage light emittingdiode package shown in FIG. 4;

FIG. 7 is a cross-sectional view of a light emitting diode package inaccordance with a third embodiment of the present invention;

FIG. 8 is a plan view of the light emitting diode package in accordancewith the third embodiment, from which an encapsulating portion isremoved;

FIG. 9 (a) is a plan view of a lower dielectric substrate of the lightemitting diode package shown in FIG. 7, which has middle conductivepatterns and lower conductive patterns formed thereon;

FIG. 9 (b) is a bottom view of the lower dielectric substrate of thelight emitting diode package shown in FIG. 7, which has the middleconductive patterns and lower conductive patterns formed thereon;

FIG. 10 is a cross-sectional view of a package body in accordance withanother embodiment of the present invention;

FIGS. 11 (a), (b) and (c) are views of respective layers of the packagebody;

FIG. 12 is a cross-sectional view of a package body in accordance with afurther embodiment of the present invention; and

FIGS. 13 (a) and (b) are a plan view and a bottom view of the packagebody shown in FIG. 12.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Hereinafter, exemplary embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings. Thefollowing embodiments are given by way of illustration to provide athorough understanding of the present invention to those skilled in theart. Hence, it should be understood that other embodiments will beevident based on the present invention, and that system, process ormechanical changes may be made without departing from the scope of thepresent invention. Likewise, it should be noted that the drawings arenot to precise scale and some of the dimensions, such as width, length,thickness, and the like, are exaggerated for clarity of description inthe drawings. Like elements are denoted by like reference numeralsthroughout the specification and drawings.

FIG. 1 is a plan view of a high voltage light emitting diode package inaccordance with a first embodiment of the present invention, FIG. 2 is across-sectional view taken along line A-A of FIG. 1, and FIG. 3 is anequivalent circuit diagram of the light emitting diode package of FIG.1.

Referring to FIGS. 1 and 2, the light emitting diode package includes apackage body 21, a plurality of landing pads 23, a blue light emittingdiode chip 30 a, a plurality of red light emitting diode chips 30 b, aphosphor, and a pair of lead electrodes 29 a, 29 b. The light emittingdiode package may further include bonding pads 25, 25 a, 25 b, wires, amolding portion 31, a bonding agent 33, and a lens 35.

The package body 21 may be formed of ceramics or plastics. Preferably,the package body 21 may be formed of ceramics to ensure thermalresistance and electrical stability. The package body 21 may include afirst cavity 21 a and a second cavity 21 b with a step formedtherebetween.

The landing pads 23 are positioned on a bottom surface of the firstcavity 21 a in the package body 21. As shown in the drawings, a landingpad is positioned at the center of the first cavity 21 a and otherlanding pads are positioned around the landing pad. The landing pads areseparated from one another on the bottom surface of the first cavity 21a. The landing pads 23 may be formed of a metallic material such as Ag,Al or Cu, which has high reflectivity.

The bonding pads 25 may be disposed on the bottom surface of the firstcavity 21. The bonding pads 25 are separated from the landing pads 23and located between the landing pads 23. The bonding pads 25 may beformed of the same material as that of the landing pads 23, but are notlimited thereto. The bonding pads 25 may be formed of a differentconductive material than the landing pads 23. At least two bonding pads25 a, 25 b of the bonding pads 25 are electrically connected to the leadelectrodes 29 a, 29 b exposed to an outside of the package body 21.

The lead electrodes 29 a, 29 b are positioned on the bottom surface ofthe package body 21 to receive power from an external power source.Further, the lead electrodes 29 a, 29 b may be connected to a bridgerectifier.

The blue light emitting diode chip 30 a includes a plurality of lightemitting cells 30 d connected in series to one another on a singlesubstrate. The blue light emitting diode chip 30 a may have, forexample, 12 light emitting cells. Pads for wire bonding are provided toopposite sides of the light emitting cells serially connected to oneanother. In the blue light emitting diode chip 30 a, the light emittingcells are formed of an AlInGaN-based compound semiconductor and areconnected in series to each other via wires. The light emitting cellsmay have an active region including an InGaN layer to emit blue light.The blue light emitting diode chip 30 a is mounted on the landing pad 23located at the center of the first cavity 21 a.

The red light emitting diode chips 30 b are mounted on the landing pads23 disposed around the landing pad located at the center of the firstcavity 21 a, respectively. Accordingly, the red light emitting diodechips 30 b are disposed around the blue light emitting diode chip 30 a.The red light emitting diode chips 30 b may have an active region formedof an AlGaInP or AlGaAs-based compound semiconductor to emit red light.

The blue and red light emitting diode chips 30 a, 30 b are connected inseries to one another between the bonding pads 25 a, 25 b via the wires.Here, the serial connection means that the light emitting diode chips 30a, 30 b are connected to one another to allow a forward current to flowupon application of voltage to the opposite ends of the light emittingdiode chips. In other words, the light emitting diode chips 30 a, 30 band the bonding pads 25, 25 a, 25 b are connected to one another suchthat the light emitting diode chips 30 a, 30 b are operated uponapplication of a forward voltage to the bonding pads 25 a, 25 b.

Further, Zener diodes 30 c may be mounted to protect the light emittingdiode chips 30 a, 30 b. The Zener diodes 30 c are connected in parallelto the light emitting diode chips 30 a, 30 b to protect the lightemitting diode chips from electrostatic discharge. As shown in FIG. 3,two Zener diodes 30 c are connected with opposite polarities in parallelto the light emitting diode chips. Here, the Zener diodes 30 may bemounted on the bonding pads 25 a, 25 b. Since the Zener diodes 30 c havea vertical structure wherein pads having wires bonded thereto arelocated on different planes, one pad is connected to the bonding pad.Thus, it is possible to provide the Zener diodes connected with theopposite polarities by connecting pads located at an upper side to eachother via the wires.

The molding portion 31 covers the light emitting diode chips 30 a, 30 bwithin the first cavity 21 a. The molding portion 31 may be formed of atransparent material, for example, epoxy or silicone. During anoperation under a high voltage, a large amount of heat may be generatedfrom the light emitting diode chips 30 a, 30 b and impose thermal stresson the molding portion 31. Thus, the molding portion 31 may be formedof, for example, gel-type silicone to endure the thermal stress.

The phosphor may be distributed in the molding portion 31. The phosphorconverts a frequency of some light emitted from the blue light emittingdiode chip 30 a. For example, the phosphor may be green or yellowphosphor. Further, the phosphor scatters light emitted from the blue andred light emitting diode chips 30 a, 30 b to mix the light. Further, adiffusing agent may be distributed in the molding portion 31 for mixingthe light.

The lens 35 is bonded onto the molding portion 31 by the lens agent 33.The lens agent 33 is preferably a high hardness silicone in order toenhance interface characteristics between the molding portion 31 and thelens 35. For example, the high hardness silicone may have a Durometershore hardness of 60 or more. On the other hand, hardness of a siliconedoes not exceed a Durometer shore hardness of 100.

Although a plastic lens may also be used as the lens 35, a glass lens ispreferably used as the lens 35 to prevent moisture infiltration. Thelens 35 is bonded onto the second cavity 21 b and a side surface of thelens 35 is also provided with the bonding agent 33 to prevent moistureinfiltration. The bonding agent 33 fills a space between an inner wallof the second cavity 21 b and the lens 35, and some of the bonding agent33 is provided to an upper portion of the lens 35 along a rounded uppersurface of the lens. Accordingly, it is possible to prevent moistureinfiltration through a gap between the inner wall of the second cavity21 b and the lens 35 and to steadily secure the lens 35 to the packagebody 21.

In this embodiment, the red light emitting diode chips 30 b exhibit a2-bonding die structure wherein pads with wires bonded thereto arelocated on the same side, but may have a 1-bonding die structure whereinthe pads with the wires bonded thereto are located on different sides,respectively. In this case, the bonding pads 25 may be omitted and thewires may connect the landing pads to the red light emitting diode chips30 b.

In this embodiment, the phosphor is illustrated as being distributed inthe molding portion 31, but the present invention is not limitedthereto. For example, the phosphor may be located above the moldingportion 31.

In this embodiment, the blue and red light emitting diode chips 30 a, 30b are provided for illustration, but the present invention is notlimited thereto. That is, any combination of light emitting diode chipsemitting light of different frequencies may be used to realize aspecific color. Further, a single light emitting diode chip having aplurality of light emitting cells connected in series to one another maybe used.

FIG. 3 is an equivalent circuit diagram of the light emitting diodepackage of FIG. 1.

Referring to FIG. 3, the blue and red light emitting diode chips 30 a,30 b are connected in series to one another between the lead electrodes29 a, 29 b. The blue light emitting diode chip 30 a includes a pluralityof light emitting cells 30 d connected in series to one another. Forexample, 12 light emitting cells 30 d may be connected in series to oneanother on a single substrate, and three red light emitting chips 30 bare connected to either side of the blue light emitting diode chip 30 a.Here, it should be understood that the number of light emitting cellsand the number of red light emitting diode chips are not limited tospecific numbers, and that a blue light emitting diode chip having morelight emitting cells and red light emitting diode chips may be mountedin the package. Here, in order to realize warm white light, the ratio ofthe number of light emitting cells to the number of red light emittingdiode chips may be about 2:1 in consideration of optical efficiency ofthe current light emitting diode chips and conversion efficiency of thephosphor.

Further, although the blue light emitting diode chip 30 a is illustratedas being connected between the blue light emitting diode chips 30 b, thepositions of these chips 30 a, 30 b are not specifically limited so longas they are connected in series.

Meanwhile, the Zener diodes 30 c are connected in parallel to the lightemitting diode chips 30 a, 30 b. Here, the Zener diodes 30 c areconnected with opposite polarities. Thus, even in the case where a highvoltage is temporarily forwardly or reversely applied to the lightemitting diode chips 30 a, 30 b, it is possible to protect the lightemitting diode package from electrostatic discharge by the Zener diodes30 c.

The opposite terminals of the light emitting diode chips connected inseries to one another, that is, the lead electrodes 29 a, 29 b, may beelectrically connected to a bridge rectifier (not shown), so that thelight emitting diode package may be operated under a high AC voltage.

FIG. 4 is a plan view of a high voltage light emitting diode package inaccordance with a second embodiment, FIG. 5 is a cross-sectional view ofthe high voltage light emitting diode package shown in FIG. 4, and FIG.6 is a detailed bottom plan view of the high voltage light emittingdiode package shown in FIG. 4.

Referring to FIG. 4, the light emitting diode package of this embodimentincludes a package body 121, a plurality of landing pads 123, a bluelight emitting diode chip 30 a, a plurality of red light emitting diodechips 30 b, a phosphor (not shown), and a pair of lead electrodes 129 a,129 b. The light emitting diode package may further include bonding pads125, 125 a, 125 b and wires W. Although not shown in the drawings, thelight emitting diode package of this embodiment may further include amolding portion 31, a bonding agent 33 and a lens 35, as in the aboveembodiment.

In this embodiment, the package body 121 has a ceramic stack structure.The ceramic stack structure of the package body 121 is best shown inFIG. 5.

Referring to FIG. 5, the package body 121 includes a package lower part1212 and a package upper part 1214, and a middle layer 1215 isinterposed between the package upper and lower parts 1212, 1214. Themiddle layer 1215 has conductive patterns and dielectric materials. Thepackage lower part 1212 has a double-layer structure of a first ceramicsubstrate 1212 a and a second ceramic substrate 1212 b. Alternatively,the package lower part 1212 may be composed of a single dielectricsubstrate or may have a multi-layer structure having three or moredielectric substrates stacked on one another. The package upper part1214 includes a third ceramic substrate 1214 a and a fourth ceramicsubstrate 1214 b stacked on the third ceramic substrate 1214 a. Thethird ceramic substrate 1214 a includes a cavity at the center thereofand serves as a cavity wall for accommodating the light emitting diodechips within the cavity. An inner surface R of the cavity wall isslanted and has a reflective portion, in particular, a metal reflectionlayer, formed thereon.

The fourth ceramic substrate 1214 b has a smaller cavity than the thirdceramic substrate 1214 a, so that a step S is formed between the thirdceramic substrate 1214 a and the fourth ceramic substrate 1214 b due toa size difference between the cavities, and a lens (not shown) may bereliably fitted into the step S.

The conductive patterns of the middle layer 1215 include the landingpads 123 and the bonding pads 125, 125 a, 125 b, as shown in FIG. 4.Each of the lead electrodes 129 a, 129 b extends to a lower surface ofthe package lower part 1214, that is, a lower surface of the packagebody 121, to have a wide area along a side periphery of the packagelower part 1214, in particular, side corners of the package lower part1214, while being connected to the corresponding conductive pattern onthe package lower part 1214.

Referring to FIG. 6, the pair of lead electrodes 129 a, 129 b may beseparated from each other, and may be formed to have a wide area on thelower surface of the package body and to be joined to, for example,conductive landing patterns (not shown) on a printed circuit board (PCB,not shown) by soldering. In this embodiment, the pair of lead electrodes129 a, 129 b are located at right and left sides on the lower surface ofthe package body, and a heat dissipation portion 120 is formed in ametal pattern between the lead electrodes 129 a, 129 b, that is, on acentral area of the lower surface of the package body. The heatdissipation portion 120 is separated from the pair of lead electrodes129 a, 129 b on the lower surface of the package body 121.

Referring to FIGS. 4 to 6, the package body 121 is formed at fourcorners thereof with corner grooves “g”, which are vertically elongated,such that the pair of lead electrodes 129 a, 129 b extends from theupper surface of the package lower part 1212 to the lower surface of thepackage upper part 1212 through the corner grooves “g”. The leadelectrodes 129 a, 129 b are exposed to side surfaces of the package body121 in the corner grooves “g”, thereby contributing to enhanced heatdissipation of the light emitting diode package. Further, the leadelectrodes 129 a, 129 b extend to surround the package lower part 1212comprising ceramic substrates 1212 a, 1212 b from the upper surface ofthe package lower part 1212 to the lower surface of the package upperpart 1212, thereby further reliably securing the ceramic substrates 1212a, 1212 b, which constitute the package lower part.

In the package body 121, the bottom surface of the cavity may be locatedon an interface between the package lower part 1212 and the packageupper part 1214, where the middle layer 1215 is present. As describedabove, the middle layer 1215 includes the conductive patterns, whichinclude the landing pads 123 and the bonding pads 125, 125 a, 25 b, sothat the landing pads 123 and the bonding pads 125, 125 a, 25 b arelocated on the bottom surface of the cavity in the package body 121.

As best shown in FIG. 4, one landing pad 123 may be positioned at thecentral region on the bottom surface of the cavity C and other landingpads 123 may be disposed around the landing pad 123. These landing pads123 are separated from one another on the bottom surface of the cavityC. The landing pads 123 may be formed of a metallic material having highreflectivity, such as Ag, Al or Cu.

As in the first embodiment, the bonding pads 125, 125 a, 125 b may bedisposed on the bottom surface of the cavity C. The bonding pads 125,125 a, 125 b are separated from the landing pads 123 and located betweenthe landing pads 123. The bonding pads 125, 125 a, 125 b may be formedof the same material as that of the landing pads 123, but are notlimited thereto. The bonding pads 125, 125 a, 125 b may be formed of adifferent conductive material from that of the landing pads 123. Twobonding pads 125 a, 125 b are electrically connected to the leadelectrodes 129 a, 129 b exposed to the side surface and lower surface ofthe package body 121.

As in the first embodiment, the lead electrodes 129 a, 129 b arepositioned on the lower surface of the package body 121 to receive powerfrom an external power source. Further, the lead electrodes 129 a, 129 bmay be connected to a bridge rectifier.

Here, as in the first embodiment, the blue light emitting diode chip 30a may include a plurality of light emitting cells 30 d (see FIG. 3)connected in series to one another on a single substrate. Pads for wirebonding are provided to opposite sides of the light emitting cellsserially connected to one another. In such a blue light emitting diodechip 30 a, the light emitting cells are formed of an AlInGaN-basedcompound semiconductor and are connected in series to one another viawires. The light emitting cells may have an active region including anInGaN layer to emit blue light. As shown in FIG. 4, the blue lightemitting diode chip 30 a is mounted on the landing pad 125 located atthe center of the cavity.

Meanwhile, a plurality of red light emitting diode chips 30 b aremounted on the landing pads 125 disposed around the landing pad locatedat the center of the cavity, respectively. Accordingly, the red lightemitting diode chips 30 b are disposed around the blue light emittingdiode chip 30 a. The red light emitting diode chips 30 b may have anactive region formed of an AlGaInP or AlGaAs-based compoundsemiconductor to emit red light.

The blue and red light emitting diode chips 30 a, 30 b are connected inseries to one another between the bonding pads 125 a, 125 b via thewires. Here, the series connection means that the light emitting diodechips 30 a, 30 b are connected to one another to allow a forward currentto flow upon application of a voltage to the opposite ends of the lightemitting diode chips. In other words, the light emitting diode chips 30a, 30 b and the bonding pads 125, 125 a, 125 b are connected to oneanother such that the light emitting diode chips 30 a, 30 b are operatedupon application of a forward voltage to the bonding pads 125 a, 125 b(see FIG. 3).

Further, Zener diodes 30 c may be mounted to protect the light emittingdiode chips 30 a, 30 b. The Zener diodes 30 c are connected in parallelto the light emitting diode chips 30 a, 30 b to protect the lightemitting diode chips from electrostatic discharge. As in the aboveembodiment, two Zener diodes 30 c are connected with opposite polaritiesin parallel to the light emitting diode chips (see FIG. 3). Here, theZener diodes 30 may be mounted on the bonding pads 125 a, 125 b. Sincethe Zener diodes 30 c have a vertical structure wherein pads havingwires bonded thereto are located on different planes, a single pad isconnected to the bonding pad. Thus, it is possible to provide the Zenerdiodes connected with the opposite polarities by connecting pads locatedat an upper side to each other via the wires.

FIG. 7 is a cross-sectional view of a light emitting diode package inaccordance with a third embodiment, FIG. 8 is a plan view of the lightemitting diode package in accordance with the third embodiment, fromwhich an encapsulating portion is removed, and FIGS. 9 (a) and (b) showmetal patterns and lead electrodes of the light emitting diode packagein accordance with the third embodiment.

Referring to FIG. 7, the light emitting diode package of this embodimentincludes a package body 210 serving as a heat dissipation substrate, anda light emitting diode chip 220 mounted on the package body 210. Thelight emitting diode package includes a transparent encapsulatingportion 231 which covers an entire upper surface of the package body210. The transparent encapsulating portion 231 may be formed by moldinga silicone resin. Alternatively, the transparent encapsulating portion231 may be formed of other kinds of transparent resin, such as an epoxyresin and the like. The transparent encapsulating portion 231 may have aconvex lens shape, the center of which is coincident with that of thelight emitting diode chip 220.

The package body 210 includes an upper substrate 211 (hereinafter,“upper dielectric substrate”) formed of a dielectric ceramic materialand a lower substrate 212 (hereinafter, “lower dielectric substrate”)formed of a dielectric ceramic material. The upper and lower dielectricsubstrates 211, 212 are stacked on each other in the vertical direction.A bonding material may be used to stack the dielectric substrates. Theupper dielectric substrate 211 is formed at an upper surface thereofwith a first upper conductive pattern 213 a acting as a landing pad anda second upper conductive pattern 213 b acting as a bonding pad. Thefirst and second upper conductive patterns 213 a, 213 b may be formed onthe upper surface of the upper dielectric substrate 211 by plating metalsuch as Au or Ag.

In this embodiment, the light emitting diode chip 220 includes avertical structure which includes electrodes at upper and lower endsthereof. The light emitting diode chip 220 is die-attached to the firstupper conductive pattern 213 a such that the lower end electrode of thelight emitting diode chip 220 is connected to the first upper conductivepattern 213 a. The upper end electrode of the light emitting diode chip220 is electrically connected to the second upper conductive pattern 213b by a bonding wire W. The light emitting diode chip 220 may be alateral type that includes both a p-type electrode and an n-typeelectrode at an upper side thereof. In this case, a plurality of bondingwires is required to connect the p-type electrode and n-type electrodeof the light emitting diode chip 220 to the upper conductive patterns,respectively.

Referring to FIG. 8, the upper conductive patterns 213 a, 213 b areformed to define a circular region together on the upper surface of theupper dielectric substrate 211. Further, discrimination marks 2112 areformed around the circular region to confirm or discriminate theposition where a lens 231 of the encapsulating portion (see FIG. 13) isformed. The discrimination marks 2112 may be formed by printing a blacksilk on the upper dielectric substrate 211.

Further, an alignment mark 2132 is formed on the first upper conductivepattern 213 a in order to achieve accurate alignment of light emittingdiode chips or accurate detection of an alignment error of the lightemitting diode chips in a process of fabricating a light emitting diodepackage. The alignment mark 2132 is formed by intentionally avoidingplating on a partial region in the upper conductive pattern 213 a andexposing an unplated region of the dielectric substrate to the outside.For example, when plating is performed with a mask covering a region onwhich the alignment mark 2132 will be formed, the unplated region formsthe alignment mark 2132. In this embodiment, the Zener diodes 222 aremounted on the first upper conductive pattern 213 a and are connected tothe second upper conductive pattern 213 b by bonding wires W. Althoughtwo bonding wires W, W are shown as connecting two electrodes of thelight emitting diode chip 220 to the second upper conductive pattern 213b, it should be understood that the number of bonding wires does notlimit the scope of the invention.

Referring again to FIG. 7, the lower dielectric substrate 212 has firstand second lower conductive patterns 215 a, 215 b formed on a lowersurface thereof to act as terminals of the lead electrodes. Preferably,the lower conductive patterns 215 a, 215 b may be formed by Ag plating.It should be understood, however, that the lower conductive patterns 215a, 215 b may be formed of any other metal. Further, first and secondmiddle conductive patterns 214 a, 214 b are formed between the upper andlower dielectric substrates 211, 212. The first and second middleconductive patterns 214 a, 214 b may be formed by Au or Ag plating.

The first upper conductive pattern 213 a and the first middle conductivepattern 214 a are connected to each other through a first upper via 216a which perpendicularly penetrates the upper dielectric substrate 211,and the first middle conductive pattern 214 a and the first lowerconductive pattern 215 a are connected to each other through a firstlower via 217 a which perpendicularly penetrates the lower dielectricsubstrate 212. Further, the second upper conductive pattern 213 b andthe second middle conductive pattern 214 b are connected to each otherthrough a second upper via 216 b which perpendicularly penetrates theupper dielectric substrate 211, and the second middle conductive pattern214 b and the second lower conductive pattern 215 b are connected toeach other through a second lower via 217 b which perpendicularlypenetrates the lower dielectric substrate 212. The first and secondupper vias 216 a, 216 b and the first and second lower vias 217 a, 217 bmay be formed of tungsten, which exhibit good thermal and electricalconductivity and has high melting point, but may be formed of any othermetallic material. Comparing the terms used in this embodiment withthose in the first and second embodiments, the first and second upperconductive patterns 214 a and 214 b may correspond to the landing padand the bonding pad, respectively. Further, the upper vias 216 a, 216 b,middle conductive patterns 214 a, 214 b, lower vias 217 a, 217 b, andfirst and second lower conductive patterns 215 a, 215 b may correspondto the lead electrodes of the first and second embodiments.

In the second embodiment, the lead electrodes extend to the lowersurface of the package body along the side periphery of the packagebody, whereas the lead electrodes of this embodiment extend to the lowersurface of the package body through the package body.

On the other hand, the light emitting diode package may be mounted on aPCB (not shown), in which the first and second lower conductive patterns215 a, 215 b may be connected to electrode pads (not shown) on the PCBby soldering.

The first and second middle conductive patterns 214 a, 214 b extend toside surfaces of the upper and lower dielectric substrates 211, 212,that is, the outermost periphery of the package body 221 to be exposedto the outside of the package body thereon. The thermal conductivity ofthe conductive patterns and the vias is superior to that of thedielectric substrates. Thus, as the first and second middle conductivepatterns 214 a, 214 b are exposed to outer air on the side surface ofthe package body 221, so that heat dissipation of the package body 221is further enhanced by convection.

In this embodiment, the package body 221 is one of several heatdissipation substrates formed by dicing a single large substrate, whichincludes stacked dielectric substrates, conductive patterns, vias, andthe like to form a plurality of packages. More specifically, the lightemitting diode package or the package body 221 includes a cut planeformed by dicing, on which a side surface of the upper dielectricsubstrate 211 and a side surface of the lower dielectric substrate 212are included. The first and second middle conductive patterns 214 a, 214b extend to the cut plane to be exposed to the outside on the cut plane.On the contrary, all of the upper conductive patterns 213 a, 213 b andall of the lower conductive patterns 215 a, 215 b are formed in limitedareas so as not to reach the cut plane, that is, the side surfaces ofthe upper and lower dielectric substrates 211, 212.

Referring to FIG. 9( a), it can be seen that each of the first andsecond middle conductive patterns 214 a, 214 b has three sidescoincident with outer side surfaces of the lower dielectric substrate212 on the upper surface of the lower dielectric substrate 212, that is,between the upper and lower dielectric substrates. Further, referring toFIG. 9( b), it can be seen that the first and second lower conductivepatterns 215 a, 215 b do not have a side coincident with the sidesurface of the lower dielectric substrate 212 and are formed in limitedareas inside the lower dielectric substrates 212. Referring to FIG. 8,it can be seen that the first and second conductive patterns 213 a, 213b are also formed in limited areas inside the lower dielectricsubstrates 212.

Referring again to FIG. 7, the first upper and lower vias 216 a, 217 aare connected to the first middle conductive pattern 214 a whilealternating with each other. Further, the second upper and lower vias216 b, 217 b are connected to the second middle conductive pattern 214 bwhile alternating with each other. By placing the upper and lower vias216 a, 216 b connected to each other via one middle conductive pattern214 a or 214 b to alternate with each other, it is possible to increasethe number of heat dissipation paths while enlarging the area of theheat dissipation paths within the upper and lower dielectric substrates211, 212. Further, the alternate arrangement of the upper via 216 a or216 b and the lower via 217 a or 217 b increases the total length of aheat path extending from the upper via 216 a or 216 b to the lower via217 a or 217 b through the middle conductive pattern 214 a or 214 b ascompared with linear arrangement of the upper and lower vias, so thatheat may be more uniformly distributed into the package body 221 andmore efficiently discharged outside.

Referring to FIG. 7 and FIGS. 9 (a) and (b), the light emitting diodepackage according to this embodiment further includes first and secondheat sink patterns 218 a, 218 b acting as a heat dissipation part, and aheat transfer via 219. The first heat sink pattern 218 a is interposedbetween the upper and lower dielectric substrates 211, 212 and thesecond heat sink pattern 218 b is formed on the lower surface of thelower dielectric substrate 212.

The first heat sink pattern 218 a is disposed between the first middleconductive pattern 214 a and the second middle conductive pattern 214 bon the upper surface of the lower dielectric substrate 212, and may beformed by the same plating process using the same metallic material asthose of the first and second middle conductive patterns 214 a, 214 b.Further, the second heat sink pattern 218 b is disposed between thefirst lower conductive pattern 215 a and the second lower conductivepattern 215 b on the lower surface of the lower dielectric substrate212, and may be formed by the same plating process using the samemetallic material as those of the first and second lower conductivepatterns 215 a, 215 b.

The first and second heat sink patterns 218 a, 218 b and the heattransfer via 219 are added to enhance heat dissipation near the centerof the package body 221 and compensate for the heat dissipation mainlyobtained at the periphery of the package body by the middle conductivepatterns, lower vias, and lower conductive patterns described above.

According to the aforementioned third embodiment, a single first upperconductive pattern 213 a acting as the landing pad and a single secondupper conductive pattern acting as the bonding pad 213 b are present onthe package body 221. According to another embodiment, however, a lightemitting diode package may include a plurality of light emitting diodechips mounted on a plurality of landing pads and serially connected toone another thereon, in which the plurality of landing pads are providedto a package body including upper and lower dielectric substrates withmiddle conductive patterns, vias, and lower conductive patterns formedthereon, as in the first and second embodiments. Here, it should beunderstood that the light emitting diode package may include a pluralityof bonding pads.

Hereinafter, other embodiments of the package body applicable to thepresent invention will be described. A detailed description ofrepetitious elements described above will be omitted herein. Likeelements will be denoted by like reference numerals.

FIG. 10 is a cross-sectional view of a package body in accordance withanother embodiment, and FIGS. 11 (a), (b) and (c) show layers of thepackage body.

As shown in FIG. 10, a package body 221 of this embodiment includes anupper dielectric substrate 211 and a lower dielectric substrate 212 asin the package body of the above embodiments. In this embodiment,however, the heat sink patterns and the heat transfer via-vias areomitted, and different numbers and arrangement of conductive patternsand upper or lower vias capable of acting as a heat sink are provided.This will be described in more detail hereinafter.

Referring to FIG. 10 and FIG. 11( a), the upper dielectric substrate 211includes a first upper conductive pattern 213 a formed at the centerthereof and second and third upper conductive patterns 213 b, 213 cformed at opposite sides thereof. A vertical type light emitting diodechip or lateral-type light emitting diode chip may be provided on theupper conductive pattern 213 a by die-attaching. When the lateral-typelight emitting diode chip is provided on the upper conductive pattern213 a by die-attaching, the first upper conductive pattern 213 a is notelectrically connected to the light emitting diode chip and thus willact only as a heat sink along with a first middle conductive pattern 214a, first lower conductive pattern 215 a, first upper via 216 a and firstlower via 217 a described below. On the other hand, when thevertical-type light emitting diode chip is provided on the upperconductive pattern 213 a by die-attaching, a lower electrode of thevertical light emitting diode chip is electrically connected to thefirst upper conductive pattern 213 a. Thus, the first upper conductivepattern 213 a will act as both a path for supplying power to the lightemitting diode chip and a heat sink. Although not shown in the drawings,the first and/or second upper conductive pattern(s) 213 b and/or 213 care electrically connected to an electrode(s) of the light emittingdiode chip via a bonding wire(s). The first, second, and third upperconductive patterns 213 a, 213 b, 213 c do not reach a side surface ofthe upper dielectric substrate 211 and are formed in limited areasinside the upper dielectric substrate 211. This configuration isprovided to prevent damage or detachment of the patterns when dicing thesubstrate, as illustrated in the above embodiment.

Referring to FIG. 10 and FIG. 11( a), first, second and third middleconductive patterns 214 a, 214 b, 214 c are formed on an upper surfaceof the lower dielectric substrate 212 or a lower surface of the upperdielectric substrate 211, that is, between the upper and lowerdielectric substrates 211, 212. The first middle conductive pattern 214a is connected to the first upper conductive pattern 213 a through thefirst upper via 216 a, the second middle conductive pattern 214 b isconnected to the second upper conductive pattern 213 b by the secondupper via 216 b, and the third middle conductive pattern 214 c isconnected to the third upper conductive pattern 213 c through the thirdupper via 216 c. As best shown in FIG. 11( b), the first middleconductive pattern 214 a has two sides coincident with side surfaces ofthe lower dielectric substrate 212 to be exposed to the outside of thepackage body thereon, and each of the second and third middle conductivepatterns 214 b, 214 c has three sides coincident with side surfaces ofthe lower dielectric substrate 212 to be exposed to the outside of thepackage body thereon.

Referring to FIG. 10 and FIG. 11( c), first, second and third lowerconductive patterns 215 a, 215 b, 215 c are formed on a lower surface ofthe lower dielectric substrate 212. The first lower conductive pattern215 a is connected to the first middle conductive pattern 214 a throughthe first lower via 217 a, the second lower conductive pattern 215 b isconnected to the second middle conductive pattern 214 b through thesecond lower via 217 b, and the third lower conductive pattern 215 c isconnected to the third middle conductive pattern 214 c through the thirdlower via 217 c. The first, second, and third lower conductive patterns215 a, 215 b, 215 c do not reach a side of the lower dielectricsubstrate 212 and are formed in limited areas inside the lowerdielectric substrate 212. This configuration is provided to preventdamage or detachment of the patterns when dicing the substrate.

As best shown in FIG. 10, the first upper via 216 a and the first lowervia 217 a are connected to the first middle conductive pattern 214 awhile alternating with each other, the second upper via 216 b and thesecond lower via 217 b are connected to the second middle conductivepattern 214 b while alternating with each other, and the third upper via216 c and the third lower via 217 c are connected to the third middleconductive pattern 214 c while alternating with each other.

FIG. 12 is a cross-sectional view of a package body in accordance with afurther embodiment of the present invention, and FIGS. 13 (a) and (b)are a plan view and a bottom view of the package body shown in FIG. 12.

Referring to FIG. 12 and FIGS. 13( a) and (b), a package body 221 ofthis embodiment includes a single ceramic dielectric substrate 211′. Theceramic substrate 211′ has first and second upper conductive patterns213 a, 213 b formed on an upper surface thereof by metal plating, forexample, Ag or Au plating. Further, the ceramic substrate 211′ has firstlower conductive patterns 215 a, 215 b. The first upper conductivepattern 213 a and the first lower conductive pattern 215 a are connectedto each other through a first via 2170 a, and the first upper conductivepattern 213 b and the first lower conductive pattern 215 b are connectedto each other through a second via 2170 b. The ceramic substrate 211′ isformed at a lower surface thereof with a lower heat sink pattern 2180.

Referring to FIG. 13( b), the ceramic substrate 211′ is formed at anupper surface thereof with an upper heat sink pattern 2130. The upperheat sink pattern 2130 may be connected to the lower heat sink pattern2180 through a heat transfer via (not shown). Here, the upper heat sinkpattern 2130 and the heat transfer via connected thereto may also beomitted from the ceramic substrate 211′, which has the lower heat sinkpattern 2180 formed on the lower surface thereof.

Several embodiments of the present invention are described above indetail. Here, it should be noted that, although a specific elementapplied to one embodiment is not applied to other embodiments in thepresent invention, the specific element is not intended to berestrictively applied only to that embodiment, and that element(s)applied to one embodiment may replace element(s) applied to otherembodiments or may additionally be applicable to the other embodiments.

What is claimed is:
 1. A light emitting diode package, comprising: apackage body and a light emitting diode chip disposed on the packagebody, the package body comprising: an upper insulation substratecomprising upper conductive patterns; a lower insulation substratecomprising lower conductive patterns; and middle conductive patternsinterposed between the upper insulation substrate and the lowerinsulation substrate, wherein: at least one of the middle conductivepatterns extends to a side surface of one of the upper insulationsubstrate and the lower insulation substrate; and the at least onemiddle conductive pattern is exposed to the outside of the package body.2. The light emitting diode package of claim 1, wherein: a side surfaceof the upper insulation substrate and a side surface of the lowerinsulation substrate are disposed in a same sectional plane; and the atleast one of the middle conductive pattern extends to the same sectionalplane.
 3. The light emitting diode package of claim 2, wherein the upperconductive patterns and the lower conductive patterns have edges indifferent sectional planes.
 4. The light emitting diode package of claim1, further comprising: upper vias disposed in the upper insulationsubstrate and electrically connecting the upper conductive patterns tothe middle conductive patterns; and lower vias disposed in the lowerinsulation substrate and electrically connecting the middle conductivepatterns to the lower conductive patterns.
 5. The light emitting diodepackage of claim 4, wherein at least one of the upper vias and at leastone of the lower vias are electrically connected to at least one of themiddle conductive patterns, and are disposed in different planes.
 6. Thelight emitting diode package of claim 1, wherein two upper conductivepatterns are disposed on an upper surface of the upper insulationsubstrate.
 7. The light emitting diode package of claim 6, wherein: afirst heat sink pattern is disposed between the upper insulationsubstrate and the lower insulation substrate; a second heat sink patternis disposed on a lower surface of the lower insulation substrate; and aheat transfer via connecting the first heat sink pattern to the secondheat sink pattern is disposed in the lower insulation substrate.
 8. Thelight emitting diode package according to claim 1, wherein: the upperconductive patterns comprise: a first upper conductive pattern disposedat a center thereof; and a second upper conductive pattern and a thirdupper conductive pattern disposed at opposite sides of the first upperconductive pattern, respectively.
 9. The light emitting diode package ofclaim 1, wherein an alignment mark of the light emitting diode chip isdisposed on at least one of the upper conductive patterns, the alignmentmark being disposed in a region where the upper insulation substrate isat least partially exposed to the upper conductive pattern.
 10. Thelight emitting diode package of claim 1, wherein the upper conductivepatterns, the middle conductive patterns, and the lower conductivepatterns comprise a metal material.
 11. The light emitting diode packageof claim 1, further comprising: a light-transmitting encapsulationmaterial disposed on an upper surface of the upper insulation substrateand covering the light emitting diode chip and the upper conductivepatterns.
 12. The light emitting diode package of claim 11, wherein thelight-transmitting encapsulation material comprises a lens sectionconcentric to the light emitting diode chip.
 13. The light emittingdiode package of claim 12, wherein an identification mark is disposed onthe upper insulation substrate and confirms a location of the lenssection.